Sign In | Join Free | My bushorchimp.com |
|
Brand Name : Infineon / IR
Model Number : IRLML5203TRPBF
Certification : ROHS
Place of Origin : CHIAN
MOQ : 10PCS
Price : NEGOTIABLE
Payment Terms : T/T, Western Union
Supply Ability : 18000PCS/WEEk
Delivery Time : 2-3DAYS
Packaging Details : 3000PCS/REEL
Product Category : MOSFET
Technology : Si
Transistor Polarity : P-Channel
Number of Channels : 1 Channel
Vds - Drain-Source Breakdown Voltage : 30 V
Id - Continuous Drain Current : 3 A
Rds On - Drain-Source Resistance : 165 mOhms
Vgs - Gate-Source Voltage : - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage : 4 V
Qg - Gate Charge : 9.5 nC
Minimum Operating Temperature : - 55 C
Maximum Operating Temperature : + 150 C
Pd - Power Dissipation : 1.25 W
Channel Mode : Enhancement
Height : 1.1 mm
Length : 2.9 mm
Width : 1.3 mm
Factory packing quantity : 3000
IRLML5203TRPBF Infineon / IR MOSFET MOSFT P-Ch -30V -3A 98mOhm 9.5nC Log Lvl
1.Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
Lead-Free
RoHS Compliant, Halogen-Free
2.Description
These P-channel MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve the extremely lowon-resistance per silicon area. This benefit provides thedesigner with an extremely efficient device for use in batteryand load management applications.
A thermally enhanced large pad leadframe has beenincorporated into the standard SOT-23 package to produce aHEXFET Power MOSFET with the industry's smallest footprint.This package, dubbed the Micro3TM, is ideal for applicationswhere printed circuit board space is at a premium. The lowprofile (<1.1mm) of the Micro3 allows it to fit easily intoextremely thin application environments such as portableelectronics and PCMCIA cards. The thermal resistance andpower dissipation are the best available
3.
![]() |
IRLML5203TRPBF Infineon / IRUltra Low On-Resistance Low Gate Charge P-Channel MOSFET MOSFET Images |